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      Changxin Memory Technologies Faces Yield Challenges in HBM3 Production

      Changxin Memory Technologies (CXMT), China's largest DRAM manufacturer, has commenced trial production of its fourth-generation high bandwidth memory, HBM3. However, the initial yield has stagnated at 25%, significantly lower than the target mass production yield of 80%. In contrast, South Korean competitor SK Hynix has been successfully mass producing similar products since 2022, achieving yields exceeding 90%.

      The yield breakdown for Changxin Memory's HBM3 products shows a front-end yield of approximately 30% for its 8-layer stacked products, while the back-end yield stands at around 70%. This results in a limited number of final good products, which are currently being supplied as samples to Chinese companies, including Alibaba's Pingtouge and Cambricon. Despite these challenges, the company is actively working to enhance its production yields.

      Industry experts attribute the low yield rates to the underdeveloped state of Through-Silicon Via (TSV) technology utilized in HBM production. Analysis from Nomad Semi indicates that while Samsung's HBM2 chips feature over 5,000 TSVs and SK Hynix's HBM3 has more than 8,000, Changxin Memory's chips contain only about 3,000 TSVs. This technological gap is estimated to be around four to five years compared to its South Korean rivals.

      © 2026 KLEA News. All Rights Reserved. This article is provided for informational purposes only. It is not offered or intended to be used as legal, tax, investment, financial, or other advice.

      Source: KLEA News

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